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HSU226
Silicon Schottky Barrier Diode for High Speed Switching
REJ03G0017-0100Z Rev.1.00 Apr.15.2003
Features
* Low reverse current, Low capacitance. * Ultra small Resin Package (URP) is suitable for surface mount design.
Ordering Information
Type No. HSU226 Laser Mark S7 Package Code URP
Pin Arrangement
Cathode mark Mark 1
S7
2 1. Cathode 2. Anode
Rev.1.00, Apr.15.2003, page 1 of 5
HSU226
Absolute Maximum Ratings
(Ta = 25C)
Item Repetitive peak reverse voltage Non-Repetitive Peak forward surge current Forward current Junction temperature Storage temperature Note: 1. 10 ms Sine Wave 1 pulse Symbol VRRM IFSM * IF Tj Tstg
1
Value 25 200 50 125 -55 to +125
Unit V mA mA C C
Electrical Characteristics
(Ta = 25C)
Item Forward voltage Symbol VF1 VF2 Reverse current Capacitance IR C Min Typ Max 0.33 0.38 0.45 2.80 Unit V V A pF Test Condition IF = 1 mA IF = 5 mA VR = 20 V VR = 1 V, f = 1 MHz
Rev.1.00, Apr.15.2003, page 2 of 5
HSU226
Main Characteristic
101 100 10-1
Forward current IF (A)
10-4
10-2 10-3 10-4 10-5 10-6 10-7 10-8 0 0.2 0.4 0.6 0.8 1.0
Ta = 75C Ta = 25C
Reverse current IR (A)
10-5
Ta = 75C
10-6
Ta = 25C
10-7
10-8
0
10
20
30
40
Forward voltage VF (V) Fig.1 Forward current vs. Forward voltage
Reverse voltage VR (V) Fig.2 Reverse current vs. Reverse voltage
f=1MHz 10
Capacitance C (pF)
1.0
0.1 0.1
1.0 Reverse voltage VR (V)
10
Fig.3 Capacitance vs. Reverse voltage
Rev.1.00, Apr.15.2003, page 3 of 5
HSU226
Package Dimensions
As of January, 2003
Unit: mm
0.3 0.15 0.9 0.15
1.7 0.15 2.5 0.15
0 - 0.10
1.25 0.15
Package Code JEDEC JEITA Mass (reference value)
URP Conforms -- 0.004 g
Rev.1.00, Apr.15.2003, page 4 of 5
HSU226
Sales Strategic Planning Div.
Keep safety first in your circuit designs!
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Copyright (c) 2003. Renesas Technology Corporation, All rights reserved. Printed in Japan.
Colophon 0.0
Rev.1.00, Apr.15.2003, page 5 of 5

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